Assemblies of Colloidal CdSe Tetrapod Nanocrystals with Lengthy Arms for Flexible Thin-Film Transistors

被引:28
作者
Heo, Hyeonjun [1 ]
Lee, Moo Hyung [3 ]
Yang, Jeehye [3 ]
Wee, Han Sol [4 ]
Lim, Jaehoon [1 ]
Hahm, Donghyo [1 ]
Yu, Ji Woong [2 ]
Bae, Wan Ki [5 ]
Lee, Won Bo [2 ]
Kang, Moon Sung [3 ]
Char, Kookheon [1 ]
机构
[1] Seoul Natl Univ, Natl Creat Res Initiat Ctr Intelligent Hrbrids, Sch Chem & Biol Engn, WCU Program Chem Convergence Energy & Environm, Seoul 08826, South Korea
[2] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 08826, South Korea
[3] Soongsil Univ, Dept Chem Engn, Seoul 06978, South Korea
[4] Sogang Univ, Dept Chem & Biomol Engn, Seoul 04107, South Korea
[5] Korea Inst Sci & Technol, Photoelect Hybrids Res Ctr, Seoul 02792, South Korea
基金
新加坡国家研究基金会;
关键词
Colloidal semiconductor nanoclystal(s); CdSe tetrapod nanocrystal(s); arm length dependence; flexible thin-film transistors; ion gel gate dielectric(s); FIELD-EFFECT TRANSISTORS; ELECTRICAL-TRANSPORT; CHARGE-TRANSPORT; SOLAR-CELLS; SOLIDS; PHOTODETECTORS; PHOTOVOLTAICS; PROSPECTS; LIGANDS; HALIDE;
D O I
10.1021/acs.nanolett.7b00096
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Herein, we report unique features of the assemblies of tetrapod-shaped colloidal nanocrystals (TpNCs) with lengthy arms applicable to flexible thin-film transistors. Due to the extended nature of tetrapod geometry, films made of the TpNC assemblies require reduced numbers of inter-NC hopping for the transport of charge carriers along a given channel length; thus, enhanced conductivity can be achieved compared to those made of typical spherical NCs without arms. Moreover, electrical conduction through the assemblies is tolerant against mechanical bending because interconnections between TpNCs can be well-preserved under bending. Interestingly, both the conductivity of the assemblies and their mechanical tolerance against bending are improved with an increase in the length of tetrapod arms. The arm length-dependency was demonstrated in a series of CdSe TpNC assemblies with different arm lengths (l = 0-90 nm), whose electrical conduction was modulated through electrolyte gating. From the TpNCs with the longest arm length included in the study (l = 90 nm), the film conductivity as high as 20 S/cm was attained at 3 V of gate voltage, corresponding to electron mobility of >10 cm(2)/(V s) even when evaluated conservatively. The high channel conductivity was retained (similar to 90% of the value obtained from the flat geometry) even under high bending (bending radius = 5 mm). The results of the present study provide new insights and guidelines for the use of colloidal nanocrystals in solution-processed flexible electronic device applications.
引用
收藏
页码:2433 / 2439
页数:7
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