High rate in situ YBa2CU3O7 film growth assisted by liquid phase

被引：23

作者：

Ohnishi, T

Hammond, RH

Jo, W

机构：

[1] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[2] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

[3] Ewha Womans Univ, Div Nano Sci, Seoul 120750, South Korea

来源：

JOURNAL OF MATERIALS RESEARCH | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1557/JMR.2004.0127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-rate (10 nm/s) in situ YBa2Cu3O7 (YBCO) film growth was demonstrated by molecular beam epitaxy with electron beam co-evaporation at a system pressure of approximately 5 x 10(-5) Torr. To explain the phase stability observed, it is suggested that activated oxygen is generated in the process. Growth of very good YBCO, with a J(c), of more than 2 MA/cm(2), is possible at this very high rate because the growth is in a liquid (Ba-Cu-O), which forms along with the YBCO epitaxy. This liquid seems essential for high J(c)-YBCO film growth at very high in situ growth rates and may be essential for all high-rate processes, including postanneal ex situ processes.

引用

页码：977 / 981

页数：5

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