A new single ended sense amplifier for low voltage embedded EEPROM non volatile memories

被引：7

作者：

Papaix, C ^{[1
]}

Daga, JM ^{[1
]}

机构：

[1] ATMEL ROUSSET, Design Technol Dept, Embedded Non Volatile Memory Grp, F-13106 Rousset, France

来源：

PROCEEDING OF THE 2002 IEEE INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN AND TESTING | 2002年

关键词：

D O I：

10.1109/MTDT.2002.1029776

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A new single ended sense amplifier is presented in this paper. It is based on a very simple direct current-voltage conversion. It has been designed in standard CMOS process for embedded non-volatile memories. Its performances are compared to one of the actually most integrated sense amplifiers, based on differential structures. A 40% faster access time has been obtained at 1.8V.

引用

页码：149 / 153

页数：5

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