Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition

被引：7

作者：

Huang, Y. ^{[1
]}

Wang, H. ^{[1
]}

Sun, Q. ^{[1
]}

Chen, J. ^{[1
]}

Li, D. Y. ^{[1
]}

Zhang, J. C. ^{[1
]}

Wang, J. F. ^{[1
]}

Wang, Y. T. ^{[1
]}

Yang, H. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 293卷 / 02期

基金：

中国国家自然科学基金;

关键词：

growth mode; X-ray diffraction; metalorganic chemical vapor deposition; indium nitride;

D O I：

10.1016/j.jcrysgro.2006.05.073

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Mosaic structure in InN layers grown by metalorganic chemical vapor deposition at various temperatures has been investigated by X-ray diffraction (XRD). With a combination of Williamson-Hall measurement and fitting of twist angles, it was found that variation of growth temperature from 450 to 550 degrees C leads to the variation of the lateral coherence length, vertical coherence length, tilt and twist of mosaic blocks in InN films in a, respectively, monotonic way. In particular, mosaic tilt increases whereas mosaic twist decreases with elevating temperature. Atomic force microscopy shows the morphological difference of the InN nucleation layers grown at 450 and 550 degrees C. Different coalescence thickness and temperature-dependent in-plane rotation of InN nuclei are considered to account for the XRD results. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：269 / 272

页数：4

共 13 条

[1] Microstructure of heteroepitaxial GaN revealed by x-ray diffraction [J].