A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer

被引：28

作者：

Krishnamoorthy, A. V. ^{[1
]}

Zheng, X. ^{[1
]}

Feng, D. ^{[3
]}

Lexau, J. ^{[2
]}

Buckwalter, J. F. ^{[1
]}

Thacker, H. D. ^{[1
]}

Liu, F. ^{[2
]}

Luo, Y. ^{[1
]}

Chang, E. ^{[2
]}

Amberg, P. ^{[1
]}

Shubin, I. ^{[1
]}

Djordjevic, S. S. ^{[1
]}

Lee, J. H. ^{[1
]}

Lin, S. ^{[1
]}

Liang, H. ^{[3
]}

Abed, A. ^{[3
]}

Shafiiha, R. ^{[3
]}

Raj, K. ^{[1
]}

Ho, R. ^{[2
]}

Asghari, M. ^{[3
]}

Cunningham, J. E. ^{[1
]}

机构：

[1] Oracle Netra Syst & Networking, San Diego, CA 92121 USA

[2] Oracle Labs, Redwood Shores, CA 94065 USA

[3] Mellanox Technol, Monterey Pk, CA 91754 USA

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 10期

关键词：

CMOS integrated circuits - Light modulators - Multiplexing equipment;

D O I：

10.1364/OE.22.012289

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate the first germanium-silicon C-band electro-absorption based waveguide modulator array and echelle-grating-based silicon wavelength multiplexer integrated with a digital CMOS driver circuit. A 9-channel, 10Gbps SiGe electro-absorption wavelength-multiplexed modulator array consumed a power of 5.8mW per channel while being modulated at 10.25Gbps by 40nm CMOS drivers delivering peak-to-peak voltage swings of 2V, achieving a modulation energy-efficiency of similar to 570fJ/bit including drivers. Performance up to 25Gbps on a single-channel SiGe modulator and CMOS driver is also reported. (C) 2014 Optical Society of America

引用

页码：12289 / 12295

页数：7

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