The effect of growth ambient on the structural and optical properties of MgxZn1-xO thin films

被引：20
作者：
Ghosh, R. [2 ]
Basak, D. [1 ]
机构：
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India
[2] Haldia Inst Technol, Sch Appl Sci, Purba Medinipur 721657, West Bengal, India
来源：
APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 16期
关键词：
Wide band gap; Sol-gel; Transparency; Solid solution; EPITAXIAL-GROWTH; BAND-GAP; ABSORPTION; ZNO; SEMICONDUCTOR; DEPOSITION;
D O I：
10.1016/j.apsusc.2009.03.072
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
MgxZn1 O-x (x = 0.0-0.20) thin films have been deposited by sol-gel technique on glass substrates and the effect of growth ambient (air and oxygen) on the structural, and optical properties have been investigated. The films synthesized in both ambient have hexagonal wurtzite structure. The c-axis lattice constant decreases linearly with the Mg content (x) up to x = 0.05, and 0.10 respectively for air- and oxygen-treated films, above which up to x = 0.20, the values vary irregularly with x. The change in the optical band gap values and the ultraviolet (UV) peak positions of MgxZn1 O-x films show the similar change with x. These results suggest that the formation of solid solution and thus the structural and optical properties of MgxZn1 O-x thin films are affected by the growth ambient. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码：7238 / 7242
页数：5
相关论文
共 37 条
[1]   The study of composition non-uniformity in ternary MgxZn1-xO thin films [J].
Chen, J ;
Shen, WZ ;
Chen, NB ;
Qiu, DJ ;
Wu, HZ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (30) :L475-L482
[2]   Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].
Choopun, S ;
Vispute, RD ;
Yang, W ;
Sharma, RP ;
Venkatesan, T ;
Shen, H .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531
[3]   CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].
DAVIS, EA ;
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&
[4]   Effect of sol concentration on the properties of ZnO thin films prepared by sol-gel technique [J].
Dutta, M. ;
Mridha, S. ;
Basak, D. .
APPLIED SURFACE SCIENCE, 2008, 254 (09) :2743-2747
[5]   Compositional dependence of the elastic constants and the lattice parameter of AlxGa1-xAs [J].
Gehrsitz, S ;
Sigg, H ;
Herres, N ;
Bachem, K ;
Köhler, K ;
Reinhart, FK .
PHYSICAL REVIEW B, 1999, 60 (16) :11601-11610
[6]   Composition dependence of electrical and optical properties in sol-gel MgxZn1-xO thin films [J].
Ghosh, R. ;
Basak, D. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
[7]   Optical studies on MgxZn1-xO wide band gap semiconductor in the perspective of phase equilibrium [J].
Ghosh, R. ;
Basak, D. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (Suppl 1) :S141-S144
[8]   Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films [J].
Ghosh, R ;
Basak, D ;
Fujihara, S .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) :2689-2692
[9]   JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].
HAYASHI, I ;
PANISH, MB ;
FOY, PW ;
SUMSKI, S .
APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&
[10]   Characterization of MgxZn1-xO thin films prepared by sol-gel dip coating [J].
Ji, ZG ;
Song, YL ;
Xiang, Y ;
Liu, K ;
Wang, C ;
Ye, ZZ .
JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) :537-540
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