Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot

被引：23

作者：

Chen, Zhiliang ^{[1
,2
]}

Zhang, Yating ^{[1
,2
]}

Yu, Yu ^{[1
,2
]}

Che, Yongli ^{[1
]}

Jin, Lufan ^{[1
]}

Li, Yifan ^{[1
]}

Li, Qingyan ^{[1
]}

Li, Tengteng ^{[1
]}

Dai, Haitao ^{[3
]}

Yao, Jianquan ^{[1
]}

机构：

[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

[2] Tianjin Univ, Sch Precis Instruments & Optoelect Engn, Minist Educ, Key Lab Optoelect Informat Technol, Tianjin 300072, Peoples R China

[3] Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

来源：

OPTICAL MATERIALS | 2019年 / 90卷

基金：

中国国家自然科学基金;

关键词：

Semiconductor; CsPbBr3 quantum dots; Resistive switching memory; Electronic material; DEVICES;

D O I：

10.1016/j.optmat.2019.01.069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Write Once Read Many (WORM) Memory, as one of the most important nonvolatile memory type, has widespread used in a variety of permanent storage applications in the Big Data age. As an excellent material, CsPbBr3 quantum dots have widely used in a lot of photoelectric devices, but CsPbBr3 quantum dots based memory device remain to be studied. In this work a WORM memory device based on CsPbBr3 quantum dots is demonstrated. The CsPbBr3 QDs based WORM shows great reproducibility, good data retention ability, irreversible electrical transition from the high resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF) can reach almost 10(4). Additionally, the device exhibits high performances under low power consumption low reading voltage (-0.5V) and writing voltage (-1.1V). To study the CsPbBr3 QDs based WORM provides an opportunity to develop the next generation high-performance and stable WORM devices.

引用

页码：123 / 126

页数：4

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