Bidirectional multiple negative differential resistance (BM-NDR): An interplay between interface resistance and redox reaction

被引：6

作者：

Dagar, Parveen ^{[1
]}

Bera, Jayanta ^{[1
]}

Vyas, Giriraj ^{[1
]}

Sahu, Satyajit ^{[1
]}

机构：

[1] Indian Inst Technol Jodhpur, Dept Phys, Jodhpur 342037, Rajasthan, India

来源：

ORGANIC ELECTRONICS | 2019年 / 71卷

关键词：

Scanning-tunneling-spectra; Reduction; Interface-resistance; MPSH; LDDOS; ORGANIC-MOLECULES; BINARY OPERATION; CONDUCTANCE; DEVICES; WIRE; DESIGN; MEMORY;

D O I：

10.1016/j.orgel.2019.05.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bidirectional multiple negative differential resistance (BM-NDR) was observed from a single 2,3-Dichloro-5,6-dicyano- 1,4-benzoquinone (DDQ) molecule at room temperature when the device was studied by using density functional theory (DFT) in association with non-equilibrium Green's function (NEGF). The BM-NDR effect was also verified experimentally by studying the scanning tunneling spectra (STS) of single DDQ molecule. The carrier transport in the device occurs mainly through the transmission channel corresponding to the highest occupied molecular orbital (HOMO) of the molecule and a commensurate change in the magnitude of transmission peak was observed at the peak and valley voltages. The reason for the NDR is proposed to be due to the two competing factors involved namely, the reduction of the molecule and the interface resistance between the molecule and the electrodes. The involvement of both the factors is validated from the molecular projected self-consistent Hamiltonian (MPSH) and the local device density of states (LDDOS) of the device at the corresponding peak and valley voltages.

引用

页码：303 / 311

页数：9

共 42 条

[1] MOLECULAR RECTIFIERS [J].

AVIRAM, A ;

RATNER, MA .

CHEMICAL PHYSICS LETTERS, 1974, 29 (02) :277-283

[2] Large conductance switching and binary operation in organic devices: Role of functional groups [J].

Bandhopadhyay, A ;

Pal, AJ .

JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (11) :2531-2536

[3] Key to design functional organic molecules for binary operation with large conductance switching [J].

Bandyopadhyay, A ;

Pal, AJ .

CHEMICAL PHYSICS LETTERS, 2003, 371 (1-2) :86-90

[4] Density-functional method for nonequilibrium electron transport -: art. no. 165401 [J].

Brandbyge, M ;

Mozos, JL ;

Ordejón, P ;

Taylor, J ;

Stokbro, K .

PHYSICAL REVIEW B, 2002, 65 (16) :1654011-16540117

[5] A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter [J].

Broekaert, TPE ;

Brar, B ;

van der Wagt, JPA ;

Seabaugh, AC ;

Morris, FJ ;

Moise, TS ;

Beam, EA ;

Frazier, GA .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (09) :1342-1349

[6] GENERALIZED MANY-CHANNEL CONDUCTANCE FORMULA WITH APPLICATION TO SMALL RINGS [J].

BUTTIKER, M ;

IMRY, Y ;

LANDAUER, R ;

PINHAS, S .

PHYSICAL REVIEW B, 1985, 31 (10) :6207-6215

[7] Large on-off ratios and negative differential resistance in a molecular electronic device [J].

Chen, J ;

Reed, MA ;

Rawlett, AM ;

Tour, JM .

SCIENCE, 1999, 286 (5444) :1550-1552

[8] Mechanism for negative differential resistance in molecular electronic devices: Local orbital symmetry matching [J].

Chen, Lan ;

Hu, Zhenpeng ;

Zhao, Aidi ;

Wang, Bing ;

Luo, Yi ;

Yang, Jinlong ;

Hou, J. G. .

PHYSICAL REVIEW LETTERS, 2007, 99 (14)

[9] INVESTIGATION OF IN0.53GA0.47AS/ALAS RESONANT TUNNELING DIODES FOR HIGH-SPEED SWITCHING [J].

CHOW, DH ;

SCHULMAN, JN ;

OZBAY, E ;

BLOOM, DM .

APPLIED PHYSICS LETTERS, 1992, 61 (14) :1685-1687

[10] A new approach to the realization and control of negative differential resistance in single-molecule nanoelectronic devices: Designer transition metal-thiol interface states [J].

Dalgleish, Hugh ;

Kirczenow, George .

NANO LETTERS, 2006, 6 (06) :1274-1278

← 1 2 3 4 5 →