Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

被引:149
作者
Park, Min Hyuk
Kim, Han Joon
Kim, Yu Jin
Lee, Young Hwan
Moon, Taehwan
Do Kim, Keum
Hyun, Seung Dam
Hwang, Cheol Seong [1 ]
机构
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
基金
新加坡国家研究基金会;
关键词
FERROELECTRICITY; ZIRCONIA;
D O I
10.1063/1.4935588
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of film thickness and wake-up field cycling on the ferroelectricity in Hf0.5Zr0.5O2 films thinner than 8 nm were carefully examined. The Hf0.5Zr0.5O2 films became more antiferroelectric-like with decreasing film thickness in pristine state, whereas all the Hf0.5Zr0.5O2 films showed ferroelectric characteristics after wake-up process. The decrease in the coercive field with decreasing film thickness could be understood based on the depolarization correction. From the temperature-dependent characterization, the tetragonal-to-orthorhombic phase transition during wake-up process is believed to be a thermally activated process, and the estimated activation energy was similar to 3.42 +/- 0.17 kJ/mol. (C) 2015 AIP Publishing LLC.
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页数:5
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