Proton-induced single-event effects on 28 nm Kintex-7 FPGA

被引：6

作者：

Wang, Zibo ^{[1
]}

Chen, Wei ^{[1
,2
]}

Yao, Zhibin ^{[2
]}

Zhang, Fengqi ^{[2
]}

Luo, Yinhong ^{[2
]}

Tang, Xiaobin ^{[1
]}

Guo, Xiaoqiang ^{[2
]}

Ding, Lili ^{[2
]}

Peng, Cong ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Dept Nucl Sci & Technol, Nanjing 210106, Peoples R China

[2] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2020年 / 107卷

基金：

中国国家自然科学基金;

关键词：

FPGA; Proton; Single-event upset; Multiple-bit upset; UPSETS; MEMORY; 28-NM;

D O I：

10.1016/j.microrel.2020.113594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton experiments were performed on Kintex-7 XC7K70T field programmable gate array by using a self-developed test system at EN tandem accelerator in Peking University. The single-event upset and multiple-bit upsets induced by low-energy proton were presented, and a cross section peak under the low-energy protons was tested. Also, the experiments under high-energy protons were performed on the proton cyclotron accelerator in the China Institute of Atomic Energy, cross sections of some blocks in FPGA were obtained. Data of low-energy and high-energy experiments showed that the LET threshold of some resources were different. Results suggest that the low-energy proton-induced single event effect must be considered.

引用

页数：6

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