A 0.9mW 0.01-1.4GHz wideband CMOS low noise amplifier for low-band ultra wideband applications

被引：7

作者：

Liu, Tsung-Te ^{[1
]}

Wang, Chorng-Kuang ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

来源：

2005 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS | 2005年

关键词：

D O I：

10.1109/ASSCC.2005.251736

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low-power wideband CMOS LNA for low-band UWB application. An NMOS common-gate shunted by a PMOS common-source input stage achieves a wideband impedance matching -7dB from 10MHz to 1.4GHz. RF cascaded by an NMOS common-source output stage sharing the identical input stage bias current 500 mu A, the 0.18-mu m LNA provides a gain 22dB and is insensitive to process variations. The LNA consumes 0.9mW from a 1.8-V supply and occupies an area of 0.03mm(2).

引用

页码：345 / 348

页数：4

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