Effects of alloy composition on gain and bandwidth of Si/SiGe and Si/GeSn avalanche photodiodes

被引：1

作者：

Majumder, Kanishka ^{[1
]}

Das, Nikhil Ranjan ^{[2
]}

机构：

[1] West Bengal Univ Technol, Acad Technol, GT Rd, Hooghly 712121, WB, India

[2] Univ Calcutta, Inst Radio Phys & Elect, Kolkata 700009, WB, India

来源：

OPTIK | 2016年 / 127卷 / 05期

关键词：

Avalanche photodiode; Alloy composition; Si/Si1-xGex; Si/Ge1-ySny; Impact ionization; STRAINED-LAYER HETEROSTRUCTURES; IMPACT IONIZATION COEFFICIENTS; PHOTODETECTORS; SEMICONDUCTORS; WAVELENGTH; PHYSICS;

D O I：

10.1016/j.ijleo.2015.11.174

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, effects of alloy composition (x or y) on gain and bandwidth of Si/Si1-xGex and Si/Ge1-ySny heterostructure avalanche photodiodes (APDs) have been investigated. Photocurrent calculation in APD is based on the consideration of dead-space effect and carrier confinement at heterointerface. Impact ionization parameters of Si1-xGex and Ge1-ySny are either calculated or interpolated from available data. The band-offsets also become a function of alloy composition and affect the carrier confinement at heterointerfaces. The photocurrent is computed using the composition dependent parameters and, hence, gain and bandwidth of the APDs are obtained. The results show that the gain in Si/Si1-xGex APD and Si/Ge1-ySny APD increases as the Ge-content and the Sn-content respectively increases. The transit-time limited bandwidth and RC-limited bandwidth of the APDs are shown to behave oppositely with change in alloy composition. (C) 2015 Elsevier GmbH. All rights reserved.

引用

页码：3059 / 3064

页数：6

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