Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD

被引：37

作者：

Chang, KM ^{[1
]}

Cheng, CC

Lang, CC

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Tyntek Corp, Hsinchu 300, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 09期

关键词：

GaN; silicon nitride; ECR; gate dielectric; MISFET;

D O I：

10.1016/S0038-1101(02)00085-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon nitride (SiN) film was deposited at 300 degreesC as the insulating layer of a GaN-based metal-insulator-semiconductor (MIS) diode by using electron cyclotron resonance chemical vapor deposition (ECR-CVD) with silane-to nitrogen (SiH4/N-2) flow ratio of 5/45. The deposited film had the refractive index of 1.9-2.0 and the relative dielectric constant of 6. Capacitance-voltage (C-V) characteristics were measured at I MHz and interface state densities were obtained by Terman's method. The negative fixed charge density of the SiN film was 1.1 x 10(11) cm(-2) and its breakdown field was greater than 5.7 MV/cm even at 350 degreesC. The value of the interface state density was less than 4 x 10(11) cm(-2) around the mid-gap and its minimum was 5 x 10(10) cm(-2) eV(-1) at 0.6 eV below the conduction band edge. From these results, the SiN film deposited by ECR-CVD is a promising gate dielectric for high temperature GaN-MISFET application. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1399 / 1403

页数：5

共 20 条

[1] Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Umeno, M .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :809-811

[2]

BLINARI SC, 1997, SOLID STATE ELECT, V41, P177

[3] High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors [J].

Cao, XA ;

Van Hove, JM ;

Klaassen, JJ ;

Polley, CJ ;

Wowchack, AM ;

Chow, PP ;

King, DJ ;

Ren, F ;

Dang, G ;

Zhang, AP ;

Abernathy, CR ;

Pearton, SJ .

SOLID-STATE ELECTRONICS, 2000, 44 (04) :649-654

[4] Effects of gas ratio on electrical properties of electron-cyclotron-resonance nitride films grown at room temperature [J].

Chang, KM ;

Tsai, JY ;

Li, CH ;

Yeh, TH ;

Wang, SW ;

Yang, JY .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8503-8506

[5]

Chang KM, 2001, PHYS STATUS SOLIDI A, V188, P175, DOI 10.1002/1521-396X(200111)188:1<175::AID-PSSA175>3.0.CO

[6]

2-H

[7] High-quality oxide/nitride/oxide gate insulator for GaN MIS structures [J].

Gaffey, B ;

Guido, LJ ;

Wang, XW ;

Ma, TP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :458-464

[8] MBE growth of oxides for III-N MOSFETS [J].

Gila, B ;

Lee, KN ;

LaRoche, J ;

Ren, F ;

Donovan, SM ;

Abernathy, CR ;

Han, J .

COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 :247-252

[9] Gd2O3/GaN metal-oxide-semiconductor field-effect transistor [J].

Johnson, JW ;

Luo, B ;

Ren, F ;

Gila, BP ;

Krishnamoorthy, W ;

Abernathy, CR ;

Pearton, SJ ;

Chyi, JI ;

Nee, TE ;

Lee, CM ;

Chuo, CC .

APPLIED PHYSICS LETTERS, 2000, 77 (20) :3230-3232

[10] An AlN/GaN insulated gate heterostructure field effect transistor with regrown n+ GaN source and drain contact [J].

Kawai, H ;

Hara, M ;

Nakamura, F ;

Asatsuma, T ;

Kobayashi, T ;

Imanaga, S .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :738-741

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