Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection

被引：20

作者：

Bablich, Andreas ^{[1
]}

Schneider, Daniel S. ^{[2
]}

Kienitz, Paul ^{[1
]}

Kataria, Satender ^{[3
]}

Wagner, Stefan ^{[2
]}

Yim, Chanyoung ^{[1
,4
]}

McEvoy, Niall ^{[5
,6
]}

Engstrom, Olof ^{[2
]}

Mueller, Julian ^{[1
]}

Sakalli, Yilmaz ^{[1
]}

Butz, Benjamin ^{[1
]}

Duesberg, Georg S. ^{[4
,5
,6
]}

Bolivar, Peter Haring ^{[1
]}

Lemme, Max C. ^{[2
,3
]}

机构：

[1] Univ Siegen, Sch Sci & Technol, Holderlinstr 3, D-57076 Siegen, Germany

[2] AMO GmbH, Adv Microelect Ctr Aachen AMICA, Otto Blumenthal Str 25, D-52074 Aachen, Germany

[3] Rhein Westfal TH Aachen, Chair Elect Devices, Fac Elect Engn & Informat Technol, Otto Blumenthal Str 25, D-52074 Aachen, Germany

[4] Univ Bundeswehr Munchen, Inst Phys, EIT 2, Fac Elect Engn & Informat Technol, Werner Heisenberg Weg 39, D-85577 Neubiberg, Germany

[5] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland

[6] Trinity Coll Dublin, AMBER, Dublin 2, Ireland

来源：

ACS PHOTONICS | 2019年 / 6卷 / 06期

关键词：

2D semiconductor; infrared photodetector; molybdenum disulfide MoS2; amorphous silicon a-Si:H; transition metal dichalcogenide TMD; semiconductor device fabrication; SCALE STATISTICAL-ANALYSIS; MOS2 ATOMIC LAYERS; GRAPHENE; TRANSITION; PHOTODETECTION; PHOTORESPONSE; GROWTH; LIGHT;

D O I：

10.1021/acsphotonics.9b00337

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Few-layer molybdenum disulfide (FL-MoS2) films have been integrated into amorphous silicon (a-Si:H) pin-photodetectors. To achieve this, vertical a-Si:H photodiodes were grown by plasma-enhanced chemical vapor deposition (PE-CVD) on top of large-scale synthesized and transferred homogeneous FL-MoS2. This novel detector array exhibits long-term stability (more than six month) and outperforms conventional silicon-based pin-photodetectors in the infrared range (IR, lambda = 2120 nm) in terms of sensitivities by up to similar to 50 mAW(-1). Photodetectivities of up to similar to 2 X 10(10) Jones and external quantum efficiencies of similar to 3% are achieved. The detectors further feature the additional functionality of bias-dependent responsivity switching between the different spectral ranges. The realization of such scalable detector arrays is an essential step toward pixelated and wavelength-selective sensors operating in the IR spectral range.

引用

页码：1372 / +

页数：13

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