Structural and electronic properties of AlN and BN wide-gap semiconductors and their BxAl1-xN solid solutions

被引：4

作者：

Ilyasov, V. V. ^{[1
]}

Zhdanova, T. P. ^{[1
]}

Nikiforov, I. Ya. ^{[1
]}

机构：

[1] Don State Tech Univ, Rostov Na Donu, Russia

来源：

JOURNAL OF STRUCTURAL CHEMISTRY | 2005年 / 46卷 / 05期

关键词：

electronic structure; physical properties; crystal structure calculations;

D O I：

10.1007/s10947-006-0202-2

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The structural and electronic properties of BxAl1-xN solid solutions (x = 0.25, 0.5, 0.75) were examined by calculating the electronic energy structure by the local coherent potential method within the framework of multiple scattering theory. The charge is transferred from aluminum to nitrogen atoms and increases with the content of boron atoms. The concentration dependences of the structural and electronic properties of these solutions are discussed.

引用

页码：791 / 798

页数：8

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