Thermal model of power semiconductor devices for electro-thermal circuit Simulations

被引：0
|
作者：
Igic, PM [1 ]
Mawby, PA [1 ]
Towers, MS [1 ]
Batcup, S [1 ]
机构：
[1] Univ Coll Swansea, Power Elect Design Ctr, Swansea SA2 8PP, W Glam, Wales
来源：
2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.
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页码：171 / 174
页数：4
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