Impact of Current Filaments on the Material and Output Characteristics of GaAs Photoconductive Switches

被引：12

作者：

Ma, Cheng ^{[1
]}

Shi, Wei ^{[1
]}

Li, Mengxia ^{[1
]}

Gui, Huaimeng ^{[1
]}

Hao, Nana ^{[1
]}

Xue, Pengbo ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Current filaments; EL2; level; gallium arsenide (GaAs); semiconductor; VELOCITY;

D O I：

10.1109/TED.2014.2323052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current filament phenomena in high gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) always draw a significant influence on the lifetime of the devices. This paper presents a study on the influence of the current filament over the material properties and output characteristics of the GaAs PCSS. The working principle of the current filaments has been analyzed and it is shown that the performance of GaAs PCSS degrades due to the heating effects of the current filaments. It is observed that the heating effect of current filament reduces the dark resistivity of the GaAs material; furthermore, it gradually damages electrode of PCSS, leading to the breakdown of PCSS. This paper presents the relationship between the turn-ON process and damage of the PCSS.

引用

页码：2432 / 2436

页数：5

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