Temperature dependence of the GaAsN conduction band structure

In this contribution the authors investigate the temperature-dependent conduction band structure of GaAs1-xNx for different nitrogen contents. An analysis of their experimental photoreflectance data based on the two-band version of the band anticrossing model shows that with decreasing temperature the energy of the effective nitrogen level E-N in GaAsN epilayers shifts significantly to higher energies. Simultaneously, the coupling parameter C-NM between the nitrogen states and the host conduction band also rises to higher values. (c) 2006 American Institute of Physics.