The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes

被引：7

作者：

Chen, P. ^{[1
]}

Zhao, D. G. ^{[1
]}

Jiang, D. S. ^{[1
]}

Zhu, J. J. ^{[1
]}

Liu, Z. S. ^{[1
]}

Le, L. C. ^{[1
]}

Yang, J. ^{[1
]}

Li, X. ^{[1
]}

Zhang, L. Q. ^{[2
]}

Liu, J. P. ^{[2
]}

Zhang, S. M. ^{[2
]}

Yang, H. ^{[2
]}

机构：

[1] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Key Lab Nanodevices & Applicat CAS, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 12期

基金：

中国国家自然科学基金;

关键词：

electron leakage current; InGaN/GaN; laser diodes; modal gain; multiple quantum wells; CONTINUOUS-WAVE OPERATION; HIGH-POWER; TEMPERATURE; VIOLET;

D O I：

10.1002/pssa.201532277

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to enhance the optical confinement and to reduce the vertical electron leakage current of InGaN-based multiple quantum well (MQW) laser diodes, a 2 nm GaN/5 nm In0.05Ga0.95N composite layer is designed as the last barrier layer between the MQW and AlGaN blocking layer in the p-region. The device simulation shows that the laser diode then has a lower threshold current and a higher output light power under same injection current than the conventional laser diodes without such a composite barrier layer. It is found that the thickness of InGaN has little influence on the P-I characteristic, while the In composition significantly changes the threshold current and output light power properties of laser diodes, which is attributed to the enhanced optical confinement and reduced vertical electron leakage current escaping from active region to p-doped region. The influences of the two parameters to modal gain are analyzed, too. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2936 / 2943

页数：8

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