Theoretical Study of Piezo-phototronic Nano-LEDs

被引：69

作者：

Liu, Ying ^{[1
]}

Niu, Simiao ^{[1
]}

Yang, Qing ^{[2
]}

Klein, Benjamin D. B. ^{[3
]}

Zhou, Yu Sheng ^{[1
]}

Wang, Zhong Lin ^{[1
,4
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Zhejiang Univ, Dept Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[4] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 42期

关键词：

piezo-phototronics; finite-element method; depletion charge channels; SOLAR-CELLS; LIGHT; PHOTODETECTOR; PIEZOTRONICS; DEVICES;

D O I：

10.1002/adma.201402328

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two-dimensional finite-element simulation of the piezo-phototronic effect in p-n-junction-based devices is carried out for the first time. A charge channel can be induced at the p-n junction interface when strain is applied, given the n-side is a piezoelectric semiconductor and the p-type side is non-piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light-emission efficiency in piezo-phototronic light-emitting devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：7209 / 7216

页数：8

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