Effects of Sn addition on the microstructure and mechanical properties of extruded Mg-Bi binary alloy

被引:27
作者
Jin, Sang-Cheol [1 ]
Lee, Jong Un [1 ]
Go, Jongbin [2 ]
Yu, Hui [3 ]
Park, Sung Hyuk [1 ]
机构
[1] Kyungpook Natl Univ, Sch Mat Sci & Engn, Daegu 41566, South Korea
[2] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Yoshida Honmachi, Kyoto 6068501, Japan
[3] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China
基金
新加坡国家研究基金会;
关键词
Mg-Bi alloy; Extrusion; Dynamic recrystallization; Microstructure; Mechanical properties; ZN-ZR ALLOY; HIGH-STRENGTH; DYNAMIC RECRYSTALLIZATION; MAGNESIUM ALLOY; HIGH-SPEED; EXTRUSION; TEXTURE; MN; CA; DUCTILITY;
D O I
10.1016/j.jma.2021.04.015
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
We investigated the effects of Sn addition on the microstructural characteristics and mechanical properties of an extruded Mg-Bi binary alloy by comparing Mg-5Bi (B5) and Mg-5Bi-4Sn (BT54). Both the extruded alloys exhibit a partially recrystallized grain structure with a strong extrusion fiber texture and numerous Mg3Bi2 precipitates. However, the addition of Sn significantly decreases the average grain size of the extruded alloy from 123.9 to 75.2 mu m. The Sn solute atoms inhibit the activity of dislocation slip, which reduces the internal strain energy accumulated in the dynamically recrystallized (DRXed) grains during extrusion. Consequently, this reduced strain energy leads to the decrease in the DRXed grain size owing to weakened grain growth during natural air-cooling. The extruded BT54 alloy exhibits higher tensile strength and ductility than the extruded B5 alloy. The improvement in the strength by the Sn addition is attributed to the combined effects of grain refinement, Sn solute atoms, and increased dislocation density. The formation of {10-11} and {10-11}-110-121 twins during tension is suppressed by the grain refinement, thereby improving the tensile elongation considerably. (C) 2021 Chongqing University. Publishing services provided by Elsevier B.V. on behalf of KeAi Communications Co. Ltd.
引用
收藏
页码:850 / 861
页数:12
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