A small-signal analysis of the modulation response of high-speed quantum-well lasers: Effects of spectral hole burning, carrier heating, and carrier diffusion-capture-escape

被引：16

作者：

Tsai, CY ^{[1
]}

Shih, FP ^{[1
]}

Sung, TL ^{[1
]}

Wu, TY ^{[1
]}

Chen, CH ^{[1
]}

Tsai, CY ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN 70101,TAIWAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 11期

关键词：

quantum-well lasers; semiconductor lasers;

D O I：

10.1109/3.641324

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a small-signal analysis of the modulation response of high-speed quantum-well (QW) lasers by simultaneously considering the effects of spectral hole burning, carrier heating, and carrier diffusion capture-escape, An explicit form of the small-signal modulation response is obtained and the nonlinear gain coefficients associated with each physical process are defined, Further simplifications in our results will give analytical forms for calculating the resonant frequency and damping rate of the modulation response, One of the simplified versions of our results is shown to agree with previous investigations, The effects of the carrier dephasing time, energy relaxation time, and diffusion-capture-escape times on the high-speed performance of QW lasers are theoretically investigated.

引用

页码：2084 / 2096

页数：13

共 47 条

[1] MODULATION BANDWIDTH OF HIGH-POWER SINGLE-MODE SEMICONDUCTOR-LASERS - EFFECT OF INTRABAND GAIN SATURATION [J].