Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation

被引：14

作者：

Keum, Dong Min ^{[1
]}

Sung, Hyuk-kee ^{[1
]}

Kim, Hyungtak ^{[1
]}

机构：

[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN; displacement damage; high electron mobility transistors; hole; irradiation; normally-off; p-AlGaN; proton; ELECTRON-MOBILITY; INDUCED CHARGE; GAN HEMT;

D O I：

10.1109/TNS.2016.2612227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton irradiation at 5 MeV was performed on normally-off p-AlGaN gate AlGaN/GaN high electron mobility transistors (HEMTs). The increase of on-resistance and the degradation of subthreshold characteristics were observed after irradiation. The reduction of on-current was induced by displacement damage which also affected ungated devices with no p-AlGaN gate layer. Thermal annealing partially recovered this reduction. The subthreshold degradation with the threshold voltage (V-th) shift was proportional to the irradiation dose. TCAD simulation indicated that the decrease of hole concentration in p-AlGaN layer resulted in the negative shift of V-th and the subthreshold degradation.

引用

页码：258 / 262

页数：5

共 38 条

[11] The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors [J].

Hu, XW ;

Choi, BK ;

Barnaby, HJ ;

Fleetwood, DM ;

Schrimpf, RD ;

Lee, SC ;

Shojah-Ardalan, S ;

Wilkins, R ;

Mishra, UK ;

Dettmer, RW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (02) :293-297

[12] Evaluation and Application of 600 V GaN HEMT in Cascode Structure [J].

Huang, Xiucheng ;

Liu, Zhengyang ;

Li, Qiang ;

Lee, Fred C. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) :2453-2461

[13]

Hwang I, 2012, PROC INT SYMP POWER, P41, DOI 10.1109/ISPSD.2012.6229018

[14] Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications [J].

Ives, Nathan E. ;

Chen, Jin ;

Witulski, Arthur F. ;

Schrimpf, Ronald D. ;

Fleetwood, Daniel M. ;

Bruce, Ralph W. ;

McCurdy, Michael W. ;

Zhang, En Xia ;

Massengill, Lloyd W. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) :2417-2422

[15] Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs [J].

Keum, Dong Min ;

Cha, Ho-Young ;

Kim, Hyungtak .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) :3362-3368

[16] High performance and high reliability AlGaN/GaN HEMTs [J].

Kikkawa, Toshihide ;

Makiyama, Kozo ;

Ohki, Toshihiro ;

Kanamura, Masahito ;

Imanishi, Kenji ;

Hara, Naoki ;

Joshin, Kazukiyo .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (06) :1135-1144

[17]

Kim H. Y., 2012, J VAC SCI TECHNOL B, V30

[18] Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs [J].

Koehler, Andrew D. ;

Specht, Petra ;

Anderson, Travis J. ;

Weaver, Bradley D. ;

Greenlee, Jordan D. ;

Tadjer, Marko J. ;

Porter, Matthew ;

Wade, Michael ;

Dubon, Oscar C. ;

Hobart, Karl D. ;

Weatherford, Todd R. ;

Kub, Francis J. .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (12) :1194-1196

[19]

Lo C. F., 2011, J VAC SCI TECHNOL B, V29

[20] Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions [J].

Lv, Ling ;

Ma, Xiaohua ;

Zhang, Jincheng ;

Bi, Zhen ;

Liu, Linyue ;

Shan, Hengsheng ;

Hao, Yue .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (01) :300-305

← 1 2 3 4 →