Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation

被引：13
作者：
Keum, Dong Min [1 ]
Sung, Hyuk-kee [1 ]
Kim, Hyungtak [1 ]
机构：
[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
AlGaN/GaN; displacement damage; high electron mobility transistors; hole; irradiation; normally-off; p-AlGaN; proton; ELECTRON-MOBILITY; INDUCED CHARGE; GAN HEMT;
D O I：
10.1109/TNS.2016.2612227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Proton irradiation at 5 MeV was performed on normally-off p-AlGaN gate AlGaN/GaN high electron mobility transistors (HEMTs). The increase of on-resistance and the degradation of subthreshold characteristics were observed after irradiation. The reduction of on-current was induced by displacement damage which also affected ungated devices with no p-AlGaN gate layer. Thermal annealing partially recovered this reduction. The subthreshold degradation with the threshold voltage (V-th) shift was proportional to the irradiation dose. TCAD simulation indicated that the decrease of hole concentration in p-AlGaN layer resulted in the negative shift of V-th and the subthreshold degradation.
引用
收藏
页码：258 / 262
页数：5
相关论文
共 38 条
  • [1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
    Ambacher, O
    Foutz, B
    Smart, J
    Shealy, JR
    Weimann, NG
    Chu, K
    Murphy, M
    Sierakowski, AJ
    Schaff, WJ
    Eastman, LF
    Dimitrov, R
    Mitchell, A
    Stutzmann, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 334 - 344
  • [2] Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation
    Anderson, Travis J.
    Koehler, Andrew D.
    Greenlee, Jordan D.
    Weaver, Bradley D.
    Mastro, Michael A.
    Hite, Jennifer K.
    Eddy, Charles R., Jr.
    Kub, Francis J.
    Hobart, Karl D.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (08) : 826 - 828
  • [3] Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs
    Chen, Jin
    Puzyrev, Yevgeniy S.
    Jiang, Rong
    Zhang, En Xia
    McCurdy, Michael W.
    Fleetwood, Daniel M.
    Schrimpf, Ronald D.
    Pantelides, Sokrates T.
    Arehart, Aaron R.
    Ringel, Steven A.
    Saunier, Paul
    Lee, Cathy
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) : 2423 - 2430
  • [4] Chen KJ, 2011, 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
  • [5] Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping
    Chen, Yingda
    Wu, Hualong
    Yue, Guanglong
    Chen, Zimin
    Zheng, Zhiyuan
    Wu, Zhisheng
    Wang, Gang
    Jiang, Hao
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 1109 - 1115
  • [6] Claeys C., 2002, RAD EFFECTS ADV SEMI, P1
  • [7] The toughest transistor yet
    Eastman, LF
    Mishra, UK
    [J]. IEEE SPECTRUM, 2002, 39 (05) : 28 - +
  • [8] High drain current and low on resistance normally-off-mode AlGaN/GaN junction HFETs with a p-type GaN gate contact
    Fujii, T.
    Nakamura, S.
    Mizuno, K.
    Nega, R.
    Iwaya, M.
    Kamiyama, S.
    Amano, H.
    Akasaki, I.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1906 - 1909
  • [9] Transport properties of proton-irradiated gallium nitride-based two-dimensional electron-gas system
    Gaudreau, F
    Fournier, P
    Carlone, C
    Khanna, SM
    Tang, HP
    Webb, J
    Houdayer, A
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) : 2702 - 2707
  • [10] Hilt O, 2010, PROC INT SYMP POWER, P347
1234