Degradation Characteristics of Normally-Off p-AlGaN Gate AlGaN/GaN HEMTs With 5 MeV Proton Irradiation

被引：14

作者：

Keum, Dong Min ^{[1
]}

Sung, Hyuk-kee ^{[1
]}

Kim, Hyungtak ^{[1
]}

机构：

[1] Hongik Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN; displacement damage; high electron mobility transistors; hole; irradiation; normally-off; p-AlGaN; proton; ELECTRON-MOBILITY; INDUCED CHARGE; GAN HEMT;

D O I：

10.1109/TNS.2016.2612227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton irradiation at 5 MeV was performed on normally-off p-AlGaN gate AlGaN/GaN high electron mobility transistors (HEMTs). The increase of on-resistance and the degradation of subthreshold characteristics were observed after irradiation. The reduction of on-current was induced by displacement damage which also affected ungated devices with no p-AlGaN gate layer. Thermal annealing partially recovered this reduction. The subthreshold degradation with the threshold voltage (V-th) shift was proportional to the irradiation dose. TCAD simulation indicated that the decrease of hole concentration in p-AlGaN layer resulted in the negative shift of V-th and the subthreshold degradation.

引用

页码：258 / 262

页数：5

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