Synthesis of organosilicon derivatives of [1]benzothieno[3,2-b][1]-benzothiophene for efficient monolayer Langmuir-Blodgett organic field effect transistors

被引：40
作者：
Borshchev, O. V. [1 ]
Sizov, A. S. [1 ]
Agina, E. V. [1 ]
Bessonov, A. A. [2 ]
Ponomarenko, S. A. [1 ,3 ]
机构：
[1] Russian Acad Sci, Enikolopov Inst Synthet Polymer Mat, Profsoyuznaya St 70, Moscow 117393, Russia
[2] Nokia Technol, 21 JJ Thomson Ave,Madingley Rd, Cambridge CB3 0FA, England
[3] Lomonosov Moscow State Univ, Dept Chem, Leninskie Gory 1-3, Moscow 119234, Russia
来源：
CHEMICAL COMMUNICATIONS | 2017年 / 53卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
INTEGRATED-CIRCUITS; HIGH-PERFORMANCE; SEMICONDUCTORS; MOBILITY; LAYER; FILMS; CRYSTALS; LENGTH;
D O I：
10.1039/c6cc08654c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
For the first time, the synthesis of organosilicon derivatives of dialkyl[1]benzothieno[3,2-b][1]-benzothiophene (BTBT) capable of forming a semiconducting monolayer at the water-air interface is reported. Self-assembled monolayer organic field-effect transistors prepared from these materials using the Langmuir-Blodgett technique showed high hole mobilities and excellent air stability.
引用
收藏
页码：885 / 888
页数：4
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