Optimization and realization of sub-100-nm channel length single halo p-MOSFETs

被引：44

作者：

Borse, DG ^{[1
]}

Rani, M

Jha, NK

Chandorkar, AN

Vasi, J

Rao, VR

Cheng, B

Woo, JCS

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[2] Adv Proc Dev & External Res, Digital DNA Labs, Austin, TX 78721 USA

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 06期

关键词：

asymmetric channel; charge-pumping; halo doping; hotcarrier; LAC; MOSFET optimization; p-MOSFET;

D O I：

10.1109/TED.2002.1003752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single halo p-MOSFETs with channel lengths down to 100 urn are optimized, fabricated, and characterized as part of this study. We show extensive device characterization results to study the effect of large angle V-T adjust implant parameters on device performance and hot carrier reliability. Results on both conventionally doped and single halo p-MOSFETs have been presented for comparison purposes.

引用

页码：1077 / 1079

页数：3

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