Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

被引：6

作者：

MacLeod, S. J. ^{[1
]}

See, A. M. ^{[1
]}

Keane, Z. K. ^{[1
]}

Scriven, P. ^{[1
]}

Micolich, A. P. ^{[1
]}

Aagesen, M. ^{[2
]}

Lindelof, P. E. ^{[2
]}

Hamilton, A. R. ^{[1
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Univ Copenhagen, Nanosci Ctr, DK-2100 Copenhagen, Denmark

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

QUANTUM-DOT; NOISE; LIMIT;

D O I：

10.1063/1.4858958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET. (C) 2014 AIP Publishing LLC.

引用

页数：3

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