Far-infrared free-electron lasers and their applications

被引：16

作者：

Murdin, B. N. ^{[1
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

来源：

CONTEMPORARY PHYSICS | 2009年 / 50卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

free-electron lasers; infrared radiation; radio frequency; ASSEMBLED QUANTUM DOTS; AUGER RECOMBINATION DYNAMICS; INTRABAND ABSORPTION; SEMICONDUCTOR SUPERLATTICES; WELLS; RELAXATION; SPECTROSCOPY; SATURATION; EXCITATION; RADIATION;

D O I：

10.1080/00107510902733856

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Free-electron lasers based on radio-frequency linear accelerators provide an important source of far-infrared radiation which allow exciting experiments that cannot be performed in any other way. Facilities such as FELIX (Nieuwegein, The Netherlands), JFEL (Newport News VA, USA), FELBE (Dresden, Germany), CLIO (Paris, France) and others provide mid- and far-infrared output in picosecond pulses with micro-joules of energy. They give continuous, wide tuning in far-IR for resonant pumping of discrete transitions (with simultaneous coverage of mid-IR) from around 3 to 250m wavelength. This enables time-resolved spectroscopy, non-linear optics and spectroscopy of weak absorptions. They have been applied to a wide variety of problems in condensed matter physics, physical chemistry and biophysics. We review the physics applications of these sources.

引用

页码：391 / 406

页数：16

共 75 条

[1] Two photon absorption in quantum dot-in-a-well infrared photodetectors [J].

Aivaliotis, P. ;

Zibik, E. A. ;

Wilson, L. R. ;

Cockburn, J. W. ;

Hopkinson, M. ;

Vinh, N. Q. .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[2] Optically detected measurement of the ground-state population of an ensemble of neutral donors in GaAs [J].

Allen, DG ;

Sherwin, MS ;

Stanley, CR .

PHYSICAL REVIEW B, 2005, 72 (03)

[3] Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules [J].

Boucaud, P ;

Gill, KS ;

Williams, JB ;

Sherwin, MS ;

Schoenfeld, WV ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :510-512

[4] Fast decoherence of slowly relaxing polarons in semiconductor InAs quantum dots [J].

Bras, F ;

Sauvage, S ;

Fishman, G ;

Boucaud, P ;

Ortega, JM ;

Gérard, JM .

EUROPHYSICS LETTERS, 2005, 70 (03) :390-396

[5] Infrared second-order optical susceptibility in InAs/GaAs self-assembled quantum dots [J].

Brunhes, T ;

Boucaud, P ;

Sauvage, S ;

Lemaître, A ;

Gérard, JM ;

Glotin, F ;

Prazeres, R ;

Ortega, JM .

PHYSICAL REVIEW B, 2000, 61 (08) :5562-5570

[6] Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures:: Role of interface roughness [J].

Califano, Marco ;

Vinh, N. Q. ;

Phillips, P. J. ;

Ikonic, Z. ;

Kelsall, R. W. ;

Harrison, P. ;

Pidgeon, C. R. ;

Murdin, B. N. ;

Paul, D. J. ;

Townsend, P. ;

Zhang, J. ;

Ross, I. M. ;

Cullis, A. G. .

PHYSICAL REVIEW B, 2007, 75 (04)

[7] Terahertz-optical mixing in undoped and doped GaAs quantum wells: From excitonic to electronic intersubband transitions [J].

Carter, SG ;

Ciulin, V ;

Hanson, M ;

Huntington, AS ;

Wang, CS ;

Gossard, AC ;

Coldren, LA ;

Sherwin, MS .

PHYSICAL REVIEW B, 2005, 72 (15)

[8] Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures [J].

Child, RA ;

Nicholas, RJ ;

Mason, NJ ;

Shields, PA ;

Wells, JPR ;

Bradley, IV ;

Phillips, J ;

Murdin, BN .

PHYSICAL REVIEW B, 2003, 68 (16)

[9] Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regime [J].

Ciesla, CM ;

Murdin, BN ;

Phillips, TJ ;

White, AM ;

Beattie, AR ;

Langerak, CJCM ;

Elliott, CT ;

Pidgeon, CR ;

Sivananthan, S .

APPLIED PHYSICS LETTERS, 1997, 71 (04) :491-493

[10] Infrared-phonon-polariton resonance of the nonlinear susceptibility in GaAs [J].

Dekorsy, T ;

Yakovlev, VA ;

Seidel, W ;

Helm, M ;

Keilmann, F .

PHYSICAL REVIEW LETTERS, 2003, 90 (05) :4-055508

← 1 2 3 4 5 6 7 8 →