Numerical calculation of strain-N+-Ge1-xSnx/P+-δGe1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction tunnel field-effect transistor

被引：1

作者：

Wang, Suyuan ^{[1
,2
]}

Zheng, Jun ^{[1
]}

Xue, Chunlai ^{[1
,2
]}

Li, Chuanbo ^{[1
,2
]}

Zuo, Yuhua ^{[1
,2
]}

Cheng, Buwen ^{[1
,2
]}

Wang, Qiming ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期

基金：

中国国家自然科学基金; 北京市自然科学基金;

关键词：

CHANNEL; SN; SI; DEPENDENCE; DESIGN; MODEL; FET; GE;

D O I：

10.7567/JJAP.56.054001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we present a theoretical calculation of the insertion of a delta-doping layer in double gate N+-Ge1-xSnx/P+-delta Ge1-xSnx/N-Ge1-y-zSiySnz/P+-Ge1-y-zSiySnz heterojunction p-type tunnel field-effect transistors (PTFETs) by semiconductor device simulation. The compositions of Ge1-xSnx and Ge1-y-zSiySnz and the optimization of the delta-layer are analyzed in detail. It is shown that the use of narrow-bandgap Ge1%xSnx in the source region and large-bandgap Ge1-y-zSiySnz in the drain region is favorable for increasing the on-state current (ION) and suppressing the ambipolar effect. The P+ delta-layer in the Ge1-xSnx considerably improves the PTFET performance compared with other structures. The best ION of 69.56 mu A/mu m and the subthreshold swing (SS) of 22mV/dec were achieved at a low applied voltage of -0.5V. (C) 2017 The Japan Society of Applied Physics

引用

页数：8

共 44 条

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