Investigation of the possibility of unfiltered aluminium vacuum arc plasma application for high-frequency short-pulse plasma immersion ion implantation
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作者:
Sivin, D. O.
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Natl Res Tomsk Polytech Univ, Tomsk 634050, RussiaNatl Res Tomsk Polytech Univ, Tomsk 634050, Russia
Sivin, D. O.
[1
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Ryabchikov, A. I.
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Natl Res Tomsk Polytech Univ, Tomsk 634050, RussiaNatl Res Tomsk Polytech Univ, Tomsk 634050, Russia
Ryabchikov, A. I.
[1
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Bumagina, A. I.
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Natl Res Tomsk Polytech Univ, Tomsk 634050, RussiaNatl Res Tomsk Polytech Univ, Tomsk 634050, Russia
Bumagina, A. I.
[1
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Bolbasov, E. N.
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Natl Res Tomsk Polytech Univ, Tomsk 634050, RussiaNatl Res Tomsk Polytech Univ, Tomsk 634050, Russia
Bolbasov, E. N.
[1
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Daneikina, N. V.
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Natl Res Tomsk Polytech Univ, Tomsk 634050, RussiaNatl Res Tomsk Polytech Univ, Tomsk 634050, Russia
Daneikina, N. V.
[1
]
机构:
[1] Natl Res Tomsk Polytech Univ, Tomsk 634050, Russia
This paper is devoted to the study of the possibilities of unfiltered aluminium vacuum arc plasma application for intermetallic layers formation using the high-frequency short-pulse plasma immersion ion implantation method. It is shown experimentally that the number density of aluminium macroparticles (MPs) on the substrate surface is decreased dramatically by 3 orders of magnitude when the ion-plasma substrate treatment time is increased from 30 s to 3 min at the bias potential -2 kV. It was shown that at high intensity low energy plasma immersion implantation of Al ions in Ti and Ni substrates a deep layer (several mu m) of aluminium dopants with concentration in the range of (12-35) at% can be formed. (C) 2014 Elsevier B.V. All rights reserved.