Origin of the 8/3 x 8/3 superstructure in STM images of the Si(111)-8x8:N surface

被引：24
作者：
Morita, Y
Tokumoto, H
机构：
[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan
[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
来源：
SURFACE SCIENCE | 1999年 / 443卷 / 1-2期
关键词：
nitrogen; scanning tunneling microscopy; silicon; surface structure; morphology; roughness; and topography;
D O I：
10.1016/S0039-6028(99)01021-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The nitrogenated Si(111)-8 x 8:N surface was studied by scanning tunneling microscopy (STM). In STM images obtained at fairly large tip-sample separations, an ordered structure of 8/3 x 8/3 was observed as reported in previous STM and low-energy electron diffraction (LEED) studies. In each 8/3 x 8/3 dot, we observed a fine structure characterized by threefold symmetry with a periodicity of 2.79 Angstrom. In addition, we observed additional satellite dots near 8/3 x 8/3 dots in STM images obtained at smaller tip-surface separations. These experimental results can be explained by considering interactions between a topmost silicon nitride layer and an underlying Si(111)-1 x 1 layer. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：L1037 / L1042
页数：6
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