Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

被引：250

作者：

Hinkle, C. L. ^{[1
,2
]}

Milojevic, M. ^{[1
]}

Brennan, B. ^{[3
]}

Sonnet, A. M. ^{[2
]}

Aguirre-Tostado, F. S. ^{[1
]}

Hughes, G. J. ^{[3
]}

Vogel, E. M. ^{[1
,2
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Texas Dallas, Dept Elect Engn, Richardson, TX 75080 USA

[3] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

基金：

爱尔兰科学基金会;

关键词：

capacitors; Fermi level; gallium arsenide; III-V semiconductors; indium compounds; oxidation; passivation; wide band gap semiconductors; X-ray photoelectron spectra; RAY-PHOTOELECTRON-SPECTROSCOPY; MOLECULAR-BEAM EPITAXY; INTERFACES; OXIDATION; SURFACES; CAPACITANCE; MOBILITY; MOSFETS; OXIDES;

D O I：

10.1063/1.3120546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaO(x) (0.5 <= x <= 1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga(2)O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga(2)O(3)) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices.

引用

页数：3

共 21 条

[1] Capacitance-voltage characterization of GaAs-Al2O3 interfaces [J].

Brammertz, G. ;

Lin, H. -C. ;

Martens, K. ;

Mercier, D. ;

Sioncke, S. ;

Delabie, A. ;

Wang, W. E. ;

Caymax, M. ;

Meuris, M. ;

Heyns, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (18)

[2] UNPINNED GALLIUM OXIDE GAAS INTERFACE BY HYDROGEN AND NITROGEN SURFACE PLASMA TREATMENT [J].

CALLEGARI, A ;

HOH, PD ;

BUCHANAN, DA ;

LACEY, D .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :332-334

[3] ACCUMULATION CAPACITANCE FOR GAAS-SIO2 INTERFACES WITH SI INTERLAYERS [J].

FREEOUF, JL ;

BACHANAN, DA ;

WRIGHT, SL ;

JACKSON, TN ;

ROBINSON, B .

APPLIED PHYSICS LETTERS, 1990, 57 (18) :1919-1921

[4] Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2x8)/(2x4) [J].

Hale, MJ ;

Yi, SI ;

Sexton, JZ ;

Kummel, AC ;

Passlack, M .

JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (13) :6719-6728

[5] Enhancement-mode GaAs MOSFETs with an In0.3Ga0.7As channel, a mobility of over 5000 cm2/V•s, and transconductance of over 475 μS/μm [J].

Hill, Richard J. W. ;

Moran, David A. J. ;

Li, Xu ;

Zhou, Haiping ;

Macintyre, Douglas ;

Thoms, Stephen ;

Asenov, Asen ;

Zurcher, Peter ;

Rajagopalan, Karthik ;

Abrokwah, Jonathan ;

Droopad, Ravi ;

Passlack, Matthias ;

Thayne, Lain G. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1080-1082

[6] Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation [J].

Hinkle, C. L. ;

Sonnet, A. M. ;

Vogel, E. M. ;

McDonnell, S. ;

Hughes, G. J. ;

Milojevic, M. ;

Lee, B. ;

Aguirre-Tostado, F. S. ;

Choi, K. J. ;

Kim, J. ;

Wallace, R. M. .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[7] Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics [J].

Hinkle, C. L. ;

Sonnet, A. M. ;

Milojevic, M. ;

Aguirre-Tostado, F. S. ;

Kim, H. C. ;

Kim, J. ;

Wallace, R. M. ;

Vogel, E. M. .

APPLIED PHYSICS LETTERS, 2008, 93 (11)

[8] Extraction of the Effective Mobility of In0.53Ga0.47As MOSFETs [J].

Hinkle, Christoper L. ;

Sonnet, Arif M. ;

Chapman, Richard A. ;

Vogel, Eric M. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (04) :316-318

[9] OXIDES ON GAAS AND INAS SURFACES - AN X-RAY-PHOTOELECTRON-SPECTROSCOPY STUDY OF REFERENCE COMPOUNDS AND THIN OXIDE LAYERS [J].

HOLLINGER, G ;

SKHEYTAKABBANI, R ;

GENDRY, M .

PHYSICAL REVIEW B, 1994, 49 (16) :11159-11167

[10] Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density [J].

Ivanco, J ;

Kubota, T ;

Kobayashi, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (07)

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