A Facile Route for Producing Single-Crystalline Epitaxial Perovskite Oxide Thin Films

被引：52

作者：

Akbashev, Andrew R. ^{[1
]}

Chen, Guannan ^{[1
]}

Spanier, Jonathan E. ^{[1
]}

机构：

[1] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

NANO LETTERS | 2014年 / 14卷 / 01期

基金：

美国国家科学基金会;

关键词：

atomic layer deposition; BiFeO3; perovskite; ferroelectric; multiferroic; epitaxy; ATOMIC LAYER DEPOSITION; ELECTRICAL-PROPERTIES; PRECURSORS; GROWTH; CO;

D O I：

10.1021/nl4030038

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report how a low vacuum pressure process followed by a few-minute annealing enables epitaxial stabilization, producing high-quality, phase-pure, single-crystalline epitaxial, and misfit dislocation-free BiFeO3(001) thin films on SrTiO3(001) at similar to 450 degrees C less than current routes. These results unambiguously challenge the widely held notion that atomic layer deposition (ALD) is not appropriate for attaining high-quality chemically complex oxide films on perovskite substrates in single-crystalline epitaxial form, demonstrating applicability as an inexpensive, facile, and highly scalable route.

引用

页码：44 / 49

页数：6

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