Orientation dependence of the Schottky barrier height for La0.6Sr0.4MnO3/SrTiO3 heterojunctions

被引：26
作者：
Minohara, M. [2 ]
Furukawa, Y. [1 ]
Yasuhara, R. [1 ]
Kumigashira, H. [1 ,3 ,4 ]
Oshima, M. [1 ,2 ,3 ,4 ]
机构：
[1] Univ Tokyo, Dept Appl Chem, Tokyo 1138656, Japan
[2] Univ Tokyo, Grad Sch Arts & Sci, Tokyo 1538902, Japan
[3] Japan Sci & Technol Agcy, CREST, Tokyo 1138656, Japan
[4] Univ Tokyo, Synchrotron Radiat Res Org, Tokyo 1138656, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期
关键词：
crystal orientation; ferromagnetic materials; lanthanum compounds; magnetic thin films; niobium; photoelectron spectra; Schottky barriers; semiconductor doping; semiconductor heterojunctions; strontium compounds;
D O I：
10.1063/1.3154523
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on the crystallographic orientation dependence of the Schottky properties for heterojunctions between a half-metallic ferromagnet La0.6Sr0.4MnO3 (LSMO) and Nb-doped SrTiO3 semiconductor. The Schottky barrier height determined by in situ photoemission measurements is independent for the substrate orientations (001) and (110), while the magnetic properties of LSMO (110) films are more enhanced than for (001) films. These results suggest that the performance of magnetic devices based on ferromagnetic manganite is improved by using (110)-oriented substrates.
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页数：3
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