0.98-mu m multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth

被引：39

作者：

Zhang, X ^{[1
]}

GutierrezAitken, A ^{[1
]}

Klotzkin, D ^{[1
]}

Bhattacharya, P ^{[1
]}

Caneau, C ^{[1
]}

Bhat, R ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 02期

关键词：

high-speed lasers; quantum-well lasers;

D O I：

10.1109/2944.605672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate GaAs - based 0.98-mu m multiple-quantum-well (MQW) tunneling injection lasers with ultrahigh-modulation bandwidths, Electrons are injected into the active region via tunneling, leading to a ''cold'' carrier distribution in the quantum wells (QW's), The tunneling time (similar to 2 ps) measured by time resolved differential transmission spectroscopy agrees with the capture time extracted form the electrical impedance measurement, The tunneling barrier prevents electrons from going over the active region into the opposite cladding layer, The carrier escape time in tunneling injection lasers is larger than that in conventional QW lasers. Enhanced differential gain, minimized gain compression and improved high frequency performance have been achieved, The -3-dB modulation bandwidth is 48 GHz and the maximum intrinsic modulation bandwidth is as high as 98 GHz.

引用

页码：309 / 314

页数：6

共 28 条

[1] QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].