共 46 条
Identification of Nascent Memory CD8 T Cells and Modeling of Their Ontogeny
被引:20
作者:
Crauste, Fabien
[1
,2
]
Mafille, Julien
[3
,5
]
Boucinha, Lilia
[3
,6
]
Djebali, Sophia
[3
]
Gandrillon, Olivier
[1
,4
]
Marvel, Jacqueline
[3
]
Arpin, Christophe
[3
]
机构:
[1] Inria, Team Dracula, F-69603 Villeurbanne, France
[2] Univ Claude Bernard Lyon 1, Inst Camille Jordan, CNRS UMR 5208, 43 Blvd 11 Novembre 1918, F-69622 Villeurbanne, France
[3] Univ Claude Bernard Lyon 1, INSERM U1111, CIRI, ICL,CNRS UMR 5308,Ecole Normale Super Lyon, F-69007 Lyon, France
[4] Univ Claude Bernard, Univ Lyon, ENS Lyon, CNRS UMR 5239,INSERM U1210,Lab Biol & Modelling C, 46 Allee Italie Site Jacques Monod, F-69007 Lyon, France
[5] Myltenyi Biotec, F-75011 Paris, France
[6] MaaT Pharma, F-69007 Lyon, France
来源:
关键词:
SHORT-LIVED EFFECTOR;
VIRAL-INFECTION;
IN-VIVO;
DIFFERENTIATION;
EXPRESSION;
SUBSETS;
LYMPHOCYTES;
PHENOTYPE;
RESPONSES;
IMMUNITY;
D O I:
10.1016/j.cels.2017.01.014
中图分类号:
Q5 [生物化学];
Q7 [分子生物学];
学科分类号:
071010 ;
081704 ;
摘要:
Primary immune responses generate short-term effectors and long-term protective memory cells. The delineation of the genealogy linking naive, effector, and memory cells has been complicated by the lack of phenotypes discriminating effector from memory differentiation stages. Using transcriptomics and phenotypic analyses, we identify Bcl2 and Mki67 as a marker combination that enables the tracking of nascent memory cells within the effector phase. We then use a formal approach based on mathematical models describing the dynamics of population size evolution to test potential progeny links and demonstrate that most cells follow a linear naive/early effector/late effector/memory pathway. Moreover, our mathematical model allows long-term prediction of memory cell numbers from a few early experimental measurements. Our work thus provides a phenotypic means to identify effector and memory cells, as well as a mathematical framework to investigate their genealogy and to predict the outcome of immunization regimens in terms of memory cell numbers generated.
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页码:306 / 317
页数:12
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