Surface states of the 3C-SiC(001)-c(4 x 2) surface studied using angle-resolved photoemission

被引:10
|
作者
Duda, L [1 ]
Johansson, LSO
Reihl, B
Yeom, HW
Hara, S
Yoshida, S
机构
[1] Univ Dortmund, D-44221 Dortmund, Germany
[2] Univ Tokyo, Dept Appl Chem, KEK, PF, Tsukuba, Ibaraki 3050801, Japan
[3] Electrotech Lab, Tsukuba, Ibaraki 305, Japan
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 04期
关键词
D O I
10.1103/PhysRevB.61.R2460
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We provide a detailed experimental investigation of the electronic band structure of the 3C-SiC(001)c(4 x 2 ) surface using angle-resolved photoemission and synchrotron radiation. A prominent surface state was identified at - 1.5 eV and referred to the Fermi level, showing a downwards dispersion by about 0.2 eV. Two other surface states were found at the energies - 0.95 eV and - 2.5 eV. The electronic structure is semiconducting and very similar to the one for the 2 x 1 reconstruction, proving the close relationship between the c(4 x 2) and the 2 x 1 structures. Comparison to theoretical band structure calculations gives no satisfactory agreeement, leaving the question about the structure of the c(4 x 2) and the 2 x 1 reconstructions still open.
引用
收藏
页码:R2460 / R2463
页数:4
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