On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes

被引：29
作者：
Zhang, Shaofei [1 ]
Connie, Ashfiqua T. [1 ]
Laleyan, David A. [1 ]
Hieu Pham Trung Nguyen [1 ]
Wang, Qi [1 ]
Song, Jun [2 ]
Shih, Ishiang [1 ]
Mi, Zetian [1 ]
机构：
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada
[2] McGill Univ, Dept Min & Mat Engn, Montreal, PQ H3A 0C5, Canada
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2014年 / 50卷 / 06期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Nanowire; GaN; light emitting diode; surface recombination; Joule heating; GAN NANOWIRES; PERFORMANCE; ARRAYS; DIFFUSION; EPILAYERS;
D O I：
10.1109/JQE.2014.2317732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the impact of surface recombination on the effective carrier injection efficiency and the Joule heating of axial InGaN/GaN nanowire light-emitting diodes (LEDs). The results reveal that the carrier injection efficiency of such devices is extremely low (<10%), due to the severe carrier loss through nonradiative surface recombination. It is further observed that the thermal resistance of typical nanowire LEDs is comparable with, or lower than that of their planar counterparts, in spite of the reduced thermal conductivity of nanowires. The poor carrier injection efficiency, however, leads to significantly elevated junction temperatures for nanowire LEDs. We have further demonstrated, both theoretically and experimentally, that the carrier injection efficiency can be significantly improved in p-doped nanowires, due to the downward surface band bending, and in InGaN/GaN/AlGaN dot-in-a-wire core-shell nanoscale heterostructures, due to the superior carrier confinement offered by the large bandgap AlGaN shell. This paper offers important insight for the design and epitaxial growth of high-performance nanowire LEDs.
引用
收藏
页码：483 / 490
页数：8
相关论文
共 46 条
[1]   Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers [J].
Aleksiejunas, R ;
Sudzius, M ;
Malinauskas, T ;
Vaitkus, J ;
Jarasiunas, K ;
Sakai, S .
APPLIED PHYSICS LETTERS, 2003, 83 (06) :1157-1159
[2]  
[Anonymous], 2012, AC RES REL 14 5
[3]   GaN nanowire surface state observed using deep level optical spectroscopy [J].
Armstrong, A. ;
Li, Q. ;
Lin, Y. ;
Talin, A. A. ;
Wang, G. T. .
APPLIED PHYSICS LETTERS, 2010, 96 (16)
[4]   Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires [J].
Baird, Lee ;
Ong, C. P. ;
Cole, R. Adam ;
Haegel, N. M. ;
Talin, A. Alec ;
Li, Qiming ;
Wang, George T. .
APPLIED PHYSICS LETTERS, 2011, 98 (13)
[5]   Surface potential of n- and p-type GaN measured by Kelvin force microscopy [J].
Barbet, S. ;
Aubry, R. ;
di Forte-Poisson, M-A. ;
Jacquet, J-C. ;
Deresmes, D. ;
Melin, T. ;
Theron, D. .
APPLIED PHYSICS LETTERS, 2008, 93 (21)
[6]   Nucleation conditions for catalyst-free GaN nanowires [J].
Bertness, K. A. ;
Roshko, A. ;
Mansfield, L. M. ;
Harvey, T. E. ;
Sanford, N. A. .
JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) :94-99
[7]   Surface-induced effects in GaN nanowires [J].
Calarco, Raffaella ;
Stoica, Toma ;
Brandt, Oliver ;
Geelhaar, Lutz .
JOURNAL OF MATERIALS RESEARCH, 2011, 26 (17) :2157-2168
[8]   Effects of Strains and Defects on the Internal Quantum Efficiency of InGaN/GaN Nanorod Light Emitting Diodes [J].
Chang, Chun-Hsiang ;
Chen, Liang-Yi ;
Huang, Li-Chuan ;
Wang, Yu-Ting ;
Lu, Tzu-Chun ;
Huang, Jian Jang .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 48 (04) :551-556
[9]   High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111) [J].
Chang, Y. -L. ;
Wang, J. L. ;
Li, F. ;
Mi, Z. .
APPLIED PHYSICS LETTERS, 2010, 96 (01)
[10]   Strain relaxation and quantum confinement in InGaN/GaN nanoposts [J].
Chen, HS ;
Yeh, DM ;
Lu, YC ;
Chen, CY ;
Huang, CF ;
Tang, TY ;
Yang, CC ;
Wu, CS ;
Chen, CD .
NANOTECHNOLOGY, 2006, 17 (05) :1454-1458
12345