Silicon nanoparticles with UV range photoluminescence synthesized through cryomilling induced phase transformation and etching

被引:11
|
作者
Elangovan, Hemaprabha [1 ]
Sengupta, Sanchita [2 ]
Narayanan, Ravishankar [3 ]
Chattopadhyay, Kamanio [1 ,4 ]
机构
[1] Indian Inst Sci, Interdisciplinary Ctr Energy Res, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci Educ & Res, Dept Chem Sci, Mohali 140306, India
[3] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
[4] Indian Inst Sci, Dept Mat Engn, Bangalore 560012, Karnataka, India
关键词
PULSED-LASER ABLATION; CRYSTALLINE SILICON; QUANTUM DOTS; SIZE; LIQUID; NI; REDUCTION; SILANE; ALLOYS; AMORPHIZATION;
D O I
10.1007/s10853-020-05374-z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report silicon nanoparticles with a particle size distribution of similar to 80 nm (mode) through controlled impact mode cryomilling of semiconductor grade silicon wafers at a temperature of 200 K under argon atmosphere. The transmission microscopic characterization of these particles establishes a partial transformation of the crystalline silicon into an amorphous phase yielding a two-phase microstructure for each of the particles. A high-speed imaging technique is utilized to understand the effect of impact energy (and milling intensity) on the phase transformation during milling. In a further development, etching of the two-phase nanocomposites leads to the dissolution of the amorphous phase yielding free nanoparticle of similar to 2 nm size that exhibit UV range photoluminescence with potential for sensors and other optical applications.
引用
收藏
页码:1515 / 1526
页数:12
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