Gain analysis of vertical-cavity surface-emitting laser for long optical fiber communication

Dilute nitride semiconductors are indispensable for today's optoelectronic devices such as semiconductor lasers and optical amplifiers in the 1300 nm wavelength band used for fiber optic communication systems. These have led to the invention of GaInNAs/GaAs for such applications. Vertical cavity surface emitting lasers (VCSELs) are attractive devices as potential lower manufacturing cost and high performance emitters for optical fiber communication systems. These devices consist of quantum wells QWs that enclosed between standard top and bottom epitaxially grown distributed Bragg reflectors (DBRs). Experimental results for GaInNAs/GaAs VCSEL as output power light-current-voltage (LIV) in continue wave CW and pulsed measurements are presented. Extracted room temperature peak amplitude for VCSEL, laser and VCSEL plus laser at fixed bias current of 10 mA and various input signal power are performed. In addition, GaInNAs/GaAs VCSELs exhibit a single longitudinal lasing mode due to the short cavity cross section area, which tends to limit the output power of the fundamental mode gain around 10 dB is obtained.