Electrical characteristics of Ti/4H-SiC silicidation Schottky barrier diode

被引：8

作者：

Kinoshita, Akimasa ^{[1
]}

Nishi, Takashi ^{[1
]}

Ohyanagi, Takasumi ^{[2
]}

Yatsuo, Tsutomu ^{[1
]}

Fukuda, Kenji ^{[1
]}

Okumura, Hajime ^{[1
]}

Arai, Kazuo ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] R&D Assoc Future Electron Devices, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

Schottky barrier diode; Schottky barrier height; annealing; titanium; silicidation; CONTACTS; TERMINATION; RECTIFIERS; CHEMISTRY; HEIGHT;

D O I：

10.4028/www.scientific.net/MSF.600-603.643

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400 similar to 700 degrees C) were investigated. The Schottky barrier height (phi(b))and the crystal structure of the samples annealed at the different temperature were measured by the forward current-voltage (IV) characteristics and the x-ray diffraction (XRD), respectively. XRD measurements were performed in the omega-2 theta scan and the pole figure measurement for Ti (101) diffraction peak. The Ob was changed as a function of temperature. It was concluded that the phi(b) variation and non-uniformity of the samples annealed at 400 degrees C, 500 degrees C, 600 degrees C and 700 degrees C was caused by changing the condition at the interface between SiC substrate and Ti. We fabricated the 600V Ti/SiC silicidation SBD annealed at 500 degrees C for 5min. As a result, a low forward voltage drop, low reverse leakage current and stability at high temperature (200 degrees C) for the Ti/SiC silicidation SBD were shown.

引用

页码：643 / +

页数：2

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