Self-organized formation of shell-like InAs/GaAs quantum dot ensembles

被引:4
|
作者
Pohl, UW
Pötschke, K
Lifshits, MB
Shchukin, VA
Jesson, DE
Bimberg, D
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Monash Univ, Sch Phys, Clayton, Vic 3800, Australia
基金
俄罗斯基础研究基金会;
关键词
quantum dot formation; multimodal distribution;
D O I
10.1016/j.apsusc.2005.12.092
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Formation of a multimodal quantum dot (QD) ensemble by strained layer epitaxy of InAs on GaAs near the critical value for the onset of the 2D-3D transition is studied. Reflection anisotropy spectroscopy is employed to confirm that a smooth surface is maintained during strained layer growth prior to QD formation. Instantaneous capping after deposition leads to InAs quantum wells with some thickness flucuations. Multimodal QD InAs ensembles form after an at least short growth interruption prior to cap layer deposition. The QDs consist of pure InAs with heights varying in steps of complete InAs monolayers. Related exciton energies indicate a simultaneous increase of both height and lateral extension, i.e. a shell-like increase of sizes. The formation of the multimodal QD ensemble is described by a kinetic approach. A growth scenario is presented where QDs having initially shorter base length stop vertical growth at a smaller height, accounting for the experimentally observed shell-like sub-ensemble structure. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:5555 / 5558
页数:4
相关论文
共 50 条
  • [31] Spatially selective formation of InAs self-organized quantum dots on patterned GaAs (100) substrates
    Zhang, R
    Tsui, R
    Shiralagi, K
    Goronkin, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B): : 455 - 458
  • [32] Si doping effect on self-organized InAs/GaAs quantum dots
    Qian, Zhao
    Songlin, Feng
    Dong, Ning
    Haijun, Zhu
    Zhiming, Wang
    Yuanming, Deng
    Journal of Crystal Growth, 1999, 200 (03): : 603 - 607
  • [33] Exciton spin dynamics in self-organized InAs/GaAs quantum dots
    Marie, X
    Jbeli, A
    Paillard, M
    Amand, T
    Gérard, JM
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 190 (02): : 523 - 527
  • [34] Spatially selective formation of InAs self-organized quantum dots on patterned GaAs (100) substrates
    Zhang, Ruth
    Tsui, Raymond
    Shiralagi, Kumar
    Goronkin, Herb
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (1 B): : 455 - 458
  • [35] Pulsed laser annealing of self-organized InAs/GaAs quantum dots
    S. Chakrabarti
    S. Fathpour
    K. Moazzami
    J. Phillips
    Y. Lei
    N. Browning
    P. Bhattacharya
    Journal of Electronic Materials, 2004, 33 : L5 - L8
  • [36] Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance
    Hwang, Jenn-Shyong
    Chen, Mei-Fei
    Lin, Kuang-I
    Tsai, Chiang-Nan
    Hwang, Wen-Chi
    Chou, Wei-Yang
    Lin, Hao-Hsiung
    Chen, Ming-Ching
    1600, Japan Society of Applied Physics (42):
  • [37] VERTICALLY SELF-ORGANIZED INAS QUANTUM BOX ISLANDS ON GAAS(100)
    XIE, QH
    MADHUKAR, A
    CHEN, P
    KOBAYASHI, NP
    PHYSICAL REVIEW LETTERS, 1995, 75 (13) : 2542 - 2545
  • [38] Study of self-organized InAs/GaAs quantum dots by photoluminescence and photoreflectance
    Hwang, JS
    Chen, MF
    Lin, KI
    Tsai, CN
    Hwang, WC
    Chou, WY
    Lin, HH
    Chen, MC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (9A): : 5876 - 5879
  • [39] Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
    Brunkov, PN
    Patanè, A
    Levin, A
    Eaves, L
    Main, PC
    Musikhin, YG
    Volovik, BV
    Zhukov, AE
    Ustinov, VM
    Konnikov, SG
    10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 243 - 246
  • [40] Effects of annealing on self-organized InAs quantum islands on GaAs (100)
    Mo, QW
    Fan, TW
    Gong, Q
    Wu, J
    Wang, ZG
    Bai, YQ
    APPLIED PHYSICS LETTERS, 1998, 73 (24) : 3518 - 3520