Self-organized formation of shell-like InAs/GaAs quantum dot ensembles

被引:4
作者
Pohl, UW
Pötschke, K
Lifshits, MB
Shchukin, VA
Jesson, DE
Bimberg, D
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Monash Univ, Sch Phys, Clayton, Vic 3800, Australia
基金
俄罗斯基础研究基金会;
关键词
quantum dot formation; multimodal distribution;
D O I
10.1016/j.apsusc.2005.12.092
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Formation of a multimodal quantum dot (QD) ensemble by strained layer epitaxy of InAs on GaAs near the critical value for the onset of the 2D-3D transition is studied. Reflection anisotropy spectroscopy is employed to confirm that a smooth surface is maintained during strained layer growth prior to QD formation. Instantaneous capping after deposition leads to InAs quantum wells with some thickness flucuations. Multimodal QD InAs ensembles form after an at least short growth interruption prior to cap layer deposition. The QDs consist of pure InAs with heights varying in steps of complete InAs monolayers. Related exciton energies indicate a simultaneous increase of both height and lateral extension, i.e. a shell-like increase of sizes. The formation of the multimodal QD ensemble is described by a kinetic approach. A growth scenario is presented where QDs having initially shorter base length stop vertical growth at a smaller height, accounting for the experimentally observed shell-like sub-ensemble structure. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:5555 / 5558
页数:4
相关论文
共 12 条
  • [1] APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS
    ASPNES, DE
    HARBISON, JP
    STUDNA, AA
    FLOREZ, LT
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1327 - 1332
  • [2] Bimberg D., 1999, QUANTUM DOT HETEROST
  • [3] Shell-like formation of self-organized InAs/GaAs quantum dots -: art. no. 045325
    Heitz, R
    Guffarth, F
    Pötschke, K
    Schliwa, A
    Bimberg, D
    Zakharov, ND
    Werner, P
    [J]. PHYSICAL REVIEW B, 2005, 71 (04)
  • [4] Self-limiting growth of strained faceted islands
    Jesson, DE
    Chen, G
    Chen, KM
    Pennycook, SJ
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (23) : 5156 - 5159
  • [5] LIFSHITS MB, 2005, P 13 INT S NAN PHYS, P308
  • [6] PHOTOLUMINESCENCE STUDY OF LOCALIZATION EFFECTS INDUCED BY THE FLUCTUATING RANDOM ALLOY POTENTIAL IN INDIRECT BAND-GAP GAAS1-XPX
    OUESLATI, M
    ZOUAGHI, M
    PISTOL, ME
    SAMUELSON, L
    GRIMMEISS, HG
    BALKANSKI, M
    [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8220 - 8227
  • [7] Evolution of a multimodal distribution of self-organized InAs/GaAs quantum dots -: art. no. 245332
    Pohl, UW
    Pötschke, K
    Schliwa, A
    Guffarth, F
    Bimberg, D
    Zakharov, ND
    Werner, P
    Lifshits, MB
    Shchukin, VA
    Jesson, DE
    [J]. PHYSICAL REVIEW B, 2005, 72 (24):
  • [8] Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy
    Pohl, UW
    Pötschke, K
    Kaiander, I
    Zettler, JT
    Bimberg, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 143 - 147
  • [9] Ripening of self-organized InAs quantum dots
    Pötschke, K
    Müller-Kirsch, L
    Heitz, R
    Sellin, RL
    Pohl, UW
    Bimberg, D
    Zakharov, N
    Werner, P
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) : 606 - 610
  • [10] Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots
    Sellin, R
    Heinrichsdorff, F
    Ribbat, C
    Grundmann, M
    Pohl, UW
    Bimberg, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 221 (221) : 581 - 585