Low-Damage and High-Rate Sputtering of Silicon Surfaces by Ethanol Cluster Ion Beam

被引：8

作者：

Ryuto, Hiromichi ^{[1
]}

Sugiyama, Kazumichi ^{[1
]}

Ozaki, Ryosuke ^{[1
]}

Takaoka, Gikan H. ^{[1
]}

机构：

[1] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 01期

关键词：

EXPANSION; SIZE; GAS;

D O I：

10.1143/APEX.2.016504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To realize the high-rate and low-damage sputtering of a Si surface, the effect of irradiating an ethanol cluster ion beam on a Si surface was investigated. The sputtering depths in Si substrates induced by the ethanol cluster ion beam irradiation were larger than those in SiO(2) substrates, which was due to a chemical sputtering effect. The lattice disorder and the surface roughness of the Si substrates decreased with increasing retarding voltage. (C) 2009 The Japan Society of Applied Physics

引用

页码：0165041 / 0165043

页数：3

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