Experimental evidences for reducing Mg activation energy in high Al-content AlGaN alloy by MgGa δ doping in (AlN)m/(GaN)n superlattice

被引：14

作者：

Wang, Xiao ^{[1
]}

Wang, Wei ^{[1
]}

Wang, Jingli ^{[1
]}

Wu, Hao ^{[1
]}

Liu, Chang ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Peoples R China

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

关键词：

ACCEPTOR ACTIVATION; TRANSPORT-PROPERTIES; EFFICIENCY;

D O I：

10.1038/srep44223

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN) 5/(GaN)(1) superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences were achieved by analyzing Mg doped high Al-content AlGaN alloys and Mg doped AlGaN SLs as well as Mg-Ga delta doped AlGaN SLs. Mg acceptor activation energy was significantly reduced from 0.378 to 0.331 eV by using Mg-Ga delta oping in SLs instead of traditional doping in alloys. This new process was confirmed to be able to realize high p-type doping in high Al-content AlGaN.

引用

页数：6

共 34 条

[1] Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes [J].