Ion beam studies of hydrogen implanted Si wafers

被引：3
|
作者：
Nurmela, A [1 ]
Henttinen, K [1 ]
Suni, T [1 ]
Tolkki, A [1 ]
Suni, I [1 ]
机构：
[1] VTT Informat Technol Microelect, FIN-02044 Espoo, Finland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 219卷
关键词：
silicon on insulator (SOI); ERDA; RBS;
D O I：
10.1016/j.nimb.2004.01.155
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have studied silicon-on-insulator (SOI) materials with two different ion beam analysis methods. The SOI samples were implanted with boron and hydrogen ions. After implantation the wafers were annealed, and some of them were bonded to thermally oxidized silicon wafers. The damage in silicon single crystal due to ion implantations has been studied by Rutherford Backscattering in the channeling mode (RBS/C). The content of the ion-implanted hydrogen has been studied by elastic recoil detection analysis (ERDA) method. The strength of the implanted region after thermal annealings were measured with the crack opening method. The boron implantation before hydrogen implantation resulted to shallower implantation depth and lower splitting temperature than in samples implanted with hydrogen only. The boron implantation after hydrogen implantation did not influence the splitting temperature and RBS spectra showed that B implantation drove the H deeper to the sample. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：747 / 750
页数：4
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