Direct mapping of the lateral force gradient on Si(111)-7x7

被引:27
作者
Kawai, Shigeki [1 ,2 ,3 ]
Sasaki, Naruo [4 ]
Kawakatsu, Hideki [1 ,2 ]
机构
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Univ Basel, Dept Phys, CH-4056 Basel, Switzerland
[4] Seikei Univ, Fac Sci & Technol, Dept Mat & Life Sci, Musashino, Tokyo 1808633, Japan
来源
PHYSICAL REVIEW B | 2009年 / 79卷 / 19期
基金
日本学术振兴会;
关键词
atomic force microscopy; elemental semiconductors; silicon; surface reconstruction; ATOMIC-SCALE; MICROSCOPY; SURFACE; FRICTION; TIP; SPECTROSCOPY;
D O I
10.1103/PhysRevB.79.195412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lateral force gradient of down to 0.01 N/m on Si(111)-7x7 was directly detected by dynamic lateral-force microscopy with an amplitude of 81 pm. Positive and negative torsional resonance frequency shifts of a silicon cantilever caused by the attractive interaction inward and outward tip ditherings were detected on adatom and nonadatom sites, respectively. The lateral force of down to subpiconewton was measurable with direct lateral-force spectroscopy. The converted lateral force predicts a possibility of the stick-slip motion in the noncontact region. The theoretical calculations were in good qualitative agreement with the experiments.
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页数:5
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