Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate

被引：38

作者：

Hamasaki, Yosuke ^{[1
]}

Shimizu, Takao ^{[1
]}

Taniguchi, Hiroki ^{[1
]}

Taniyama, Tomoyasu ^{[1
]}

Yasui, Shintaro ^{[1
]}

Itoh, Mitsuru ^{[1
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期

关键词：

THIN-FILMS; CRYSTAL;

D O I：

10.1063/1.4866798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaFeO3-type AlFeO3 is consisted of oxygen octahedra and tetrahedra containing Al and Fe ions and is known to have a non-centrosymmetric polar structure with space group Pna2(1). We tried to grow epitaxial GaFeO3-type AlFeO3 films on SrTiO3 (111) substrates by pulsed laser deposition technique. Both the atomic arrangement of close-packed and the atomic distance of the substrate surface played important roles in stabilizing GaFeO3-type AlFeO3 on the substrate. Piezoresponse force microscopy measurements clearly showed that GaFeO3-type AlFeO3 films have ferroelectricity at room temperature. In addition, AlFeO3 film also showed pinched-like hysteresis loop with T-N similar to 317 K. (C) 2014 AIP Publishing LLC.

引用

页数：5

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