Application Exploration for 3-D Integrated Circuits: TCAM, FIFO, and FFT Case Studies

被引:20
作者
Davis, W. Rhett [1 ]
Oh, Eun Chu [1 ]
Sule, Ambarish M. [1 ]
Franzon, Paul D. [1 ]
机构
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
基金
美国国家科学基金会;
关键词
Fast Fourier transform (FFT); first-in first-out (FIFO); ternary content-addressable memory (TCAM); 3-D integrated circuit (IC); HIGH-SPEED; PERFORMANCE; MEMORY; ALGORITHM; ICS;
D O I
10.1109/TVLSI.2008.2009352
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
3-D stacking and integration can provide system advantages. This paper explores application drivers and computer-aided design (CAD) for 3-D integrated circuits (ICs). Interconnect-rich applications especially benefit, sometimes up to the equivalent of two technology nodes. This paper presents physical-design case studies of ternary content-addressable memories (TCAMs), first-in first-out (FIFO) memories, and a 8192-point fast Fourier transform (FFT) processor in order to quantify the benefit of the through-silicon vias in an available 180-nm 3-D process. The TCAM shows a 23% power reduction and the FFT shows a 22% reduction in cycle-time, coupled with an 18% reduction in energy per transform.
引用
收藏
页码:496 / 506
页数:11
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