AC plasma induced modifications in β-In2S3 thin films prepared by spray pyrolysis

被引：11

作者：

Calixto-Rodriguez, M. ^{[1
]}

Martinez, H. ^{[1
]}

Sanchez-Juarez, A. ^{[2
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Ciencias Fis, Cuernavaca 62210, Morelos, Mexico

[2] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Indium sulfide; Plasma treatment; Spray pyrolysis; Glow discharge; ION IRRADIATION; SOLAR-CELLS; INDIUM; COPPER; IN2S3;

D O I：

10.1016/j.tsf.2008.11.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

beta-In2S3 thin films, deposited by spray pyrolysis, were treated in N-2 and air plasmas at 240 and 400 Pa. X-ray diffraction, SEM, and EDS analysis, and optical and electrical studies have been used to characterize the as-prepared and plasma treated thin films. The post-deposition plasma treatments affect the morphology and the optoelectronic properties of the In2S3 thin films. The In2S3 thin films treated with N-2 plasma at 240 Pa showed an optical band gap, E-g, of 2.16 eV and an electrical conductivity of 2 x 10(-2) (Omega cm)(-1). (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2332 / 2334

页数：3

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